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TPCA8006-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVII)
TPCA8006-H
0.50.1
Switching Regulator Applications Motor Drive Applications DCDC Converter Applications
6.00.3
Unit: mm
1.27 8 0.40.1 5 0.05 M A
5.00.2
* * * * * *
Small footprint due to a small and thin package High speed switching Low drain-source ON-resistance
: RDS (ON) = 41 m (typ.) (VG=10V, ID=9A)
0.150.05
1 0.950.05
4
0.595 A
High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 100 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
5.00.2
0.05 S S 1 0.60.1 4 1.10.2
4.250.2
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR
Rating 100 100 20 18 36 45 2.8
Unit V V V A W W
8
5 0.80.1
1,2,3SOURCE 5,6,7,8DRAIN
4GATE
JEDEC JEITA TOSHIBA
2-5Q1A
Pulsed (Note 1) (Tc=25) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b)
Drain power dissipation Drain power dissipation
Weight: 0.069 g (typ.)
Drain power dissipation
Circuit Configuration
1.6 W
8 7 6 5
Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range
224 18 4.5 150 -55 to 150
mJ A mJ C C
1 2 3 4
EAR Tch Tstg
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-20
3.50.2
Absolute Maximum Ratings (Ta = 25C)
0.1660.05
TPCA8006-H
Thermal Characteristics
Characteristic Thermal resistance, channel to case (Tc=25) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max 2.78 Unit C/W
Rth (ch-a)
44.6
C/W
Thermal resistance, channel to ambient (t = 10 s) (Note 2b)
Rth (ch-a)
78.1
C/W
Marking (Note 5)
TPCA 8006-H
*
Type Lot No.
Note 1: The channel temperature should not exceed 150C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
(a)
(b)
Note 3: VDD = 50 V Tch = 25C (initial) L = 0.8 mH RG = 25 IAR = 18 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)
2
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TPCA8006-H
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("Miller") charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD 80 V, VGS = 10 V, ID = 18 A - Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V 4.7 ID = 9 A RL = 5.6 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 20 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 9 A VDS = 10 V, ID = 9 A Min 100 3.0 7.5 VOUT Typ. 41 15 780 17 390 3 13 2 13 12 5.6 4.0 6.9 Max 100 100 5.0 67 ns nC pF Unit nA A V V m S
VDD 50 V - Duty < 1%, tw = 10 s =
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Drain reverse current Forward voltage (diode) Pulse Symbol IDRP VDSF Test Condition IDR = 18 A, VGS = 0 V Min Typ. Max 36 -1.7 Unit A V
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TPCA8006-H
ID - VDS
20 Common source Ta = 25C Pulse test 10 9 8.5 8 50 7.5 40 10
ID - VDS
9 8.5 Common source Ta = 25C Pulse test
Drain current ID (A)
Drain current ID (A)
16
7 12
8 30 7.5 20 7 10 6.5 VGS = 6V
8 6.5 4
VGS = 6V
0 0
0.4
0.8
1.2
1.6
2
0
0
2
4
6
8
10
Drain-source voltage VDS
(V)
Drain-source voltage VDS
(V)
ID - VGS
40
VDS - VGS
2
Drain current ID (A)
32
Drain-source voltage VDS (V)
Common source VDS = 20 V Pulse test
1.6
Common source Ta = 25C Pulse test
24
1.2
16
100
0.8
ID = 18 A
8
25 Ta = -55C
0.4
9 4.5
0
0
2
4
6
8
10
0
0
4
8
12
16
20
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
(S)
Yfs - ID
100 Common source VDS = 20 V Pulse test Ta = -55C 10 125 1 Common source Ta = 25C Pulse test
RDS (ON) - ID
Forward transfer admittance |Yfs|
Drain-source ON-resistance RDS (ON) ()
0.1 VGS = 10 V
1
25
0.1 0.1
1
10
100
Drain current ID (A)
0.01 0.1
1
10
100
Drain current ID (A)
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TPCA8006-H
RDS (ON) - Ta
0.1 Common source Pulse test 9 ID = 18 A 0.06 100 Common source Ta = 25C Pulse test
IDR - VDS
10 5 3
Drain-source ON-resistance RDS (ON) ()
0.08
Drain reverse current IDR (A)
4.5
10
0.04
1
1
VGS = 0 V
0.02
0 -80
-40
0
40
80
120
160
0.1
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Ambient temperature
Ta
(C)
Drain-source voltage VDS
(V)
Capacitance - VDS
10000 6
Vth - Ta Gate threshold voltage Vth (V)
5
(pF)
1000
Ciss
4
Capacitance C
Coss 100
3
2
10
Common source VGS = 0 V f = 1 MHz Ta = 25C
Crss
Common source VDS = 10 V ID = 1 mA Pulse test
1
1 0.1
1
10
100
0 -80
-40
0
40
80
120
160
Drain-source voltage VDS (V)
Ambient temperature
Ta
(C)
Dynamic input/output characteristics
100 Common source ID = 18 A Ta = 25C Pulse test 20
Drain-source voltage VDS (V)
80
VDS
16
40
VGS
8
20
4
0 0
4
8
12
16
0 20
Total gate charge
Qg
(nC)
Gate-source voltage
60
VDD = 80 V
12
VGS (V)
5
2006-11-20
TPCA8006-H
rth - tw
1000 (1) Device mounted on a glass-epoxy board (a) (Note2a) (2) Device mounted on a glass-epoxy board (b) 100 (Note2b) (3) Tc = 25C (2)
Transient thermal impedance rth (C/W)
(1)
10
(3) 1
Single - pulse 0.1 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw (s)
PD - Ta
3.0
(1) Device mounted on a
PD - Tc
50
Drain power dissipation PD (W)
2.5
(1)
glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b)
(W) Drain power dissipation PD
40 30 20 10 0
2.0 (2) 1.5
10s
1.0
0.5
0 0
40
80
120
160
0
40
80
120
160
Ambient temperature
Ta (C)
Case temperature
Tc
(C)
Safe operating area
100 ID max (Pulse) * t = 1ms *
(A)
10 ID max (Continuous)
10ms *
Drain current ID
1
DC Operation Tc = 25C
*:Single - pulse 0.1 Ta = 25C Curves must be derated linearly with increase in temperature. 0.01 0.1 1 10 VDSS max 100 1000
Drain-source voltage VDS (V)
6
2006-11-20
TPCA8006-H
7
2006-11-20

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